View APT12040JFLL_1211328.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT12040JFLL
1200V 24A 0.400
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT12040JFLL UNIT Volts Amps
1200 24 96 30 40 595 4.76 -55 to 150 300 24 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 0.40 250 1000 100 3 5
(VGS = 10V, 12A)
Ohms A nA Volts
12-2003 050-7125 Rev B
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT12040JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 30A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 30A @ 25C 6 RG = 0.6 INDUCTIVE SWITCHING @ 25C VDD = 800V, VGS = 15V ID = 30A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 800V, VGS = 15V ID = 30A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
7247 1102 200 275 32 179 21 14 67 24 1265 1147 2293 1411
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
24 96 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -24A)
5
dv/
t rr
Reverse Recovery Time (IS = -24A, di/dt = 100A/s) Reverse Recovery Charge (IS = -24A, di/dt = 100A/s) Peak Recovery Current (IS = -24A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
375 860 2.0 9.0 15 28
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.21 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 11.11mH, RG = 25, Peak IL = 24A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -24A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.15
0.7
0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
12-2003
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-7125 Rev B
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
70
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
APT12040JFLL
VGS =15 & 10V 60 50 40 30 20 5V 10 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
7V 6V
0.0432
0.0273F
Power (watts)
0.142
0.469F
5.5V
0.0189 Case temperature. (C)
44.2F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 70 60 50 40 30 20 10 0 TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.40
NORMALIZED TO V = 10V @ 12A
GS
ID, DRAIN CURRENT (AMPERES)
1.30 1.20 VGS=10V 1.10
1.00 VGS=20V 0.90 0.80
0
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
20
1.10
1.05 1.00
15
10
0.95 0.90 0.85
5
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0 25
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
= 12A = 10V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0 0.9 0.8
1.5
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7125 Rev B
12-2003
96
OPERATION HERE LIMITED BY RDS (ON)
30,000
APT12040JFLL
ID, DRAIN CURRENT (AMPERES)
50 10,000
C, CAPACITANCE (pF)
Ciss
100S
10 5 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1000
Coss
10mS 100
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 30A
200 100 TJ =+150C TJ =+25C
12
VDS= 240V
VDS= 600V 8
VDS= 960V
10
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 300 250
td(on) and td(off) (ns)
0 0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 90
V
DD G
50
= 800V
td(off)
80 70
R
= 5
T = 125C
J
L = 100H
tf
200
V
DD G
= 800V
60
tr and tf (ns)
R
= 5
150 100 50
T = 125C
J
50 40 30 20 tr
L = 100H
td(on) 0 5 25 30 35 40 45 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0 25 30 35 40 45 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 9000 8000
SWITCHING ENERGY (J)
V I
DD
10
15
20
5
10
15
20
4000 3500
SWITCHING ENERGY (J)
= 800V
= 800V
R
= 5
D J
= 30A
T = 125C
J
T = 125C
3000 2500 2000 1500 1000
L = 100H EON includes diode reverse recovery.
7000 6000 5000 4000 3000 2000 1000 0
Eon
L = 100H EON includes diode reverse recovery.
Eoff
Eon
12-2003
Eoff 500 0 25 30 35 40 45 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 5 10 15 20
050-7125 Rev B
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT12040JFLL
10 % td(on) tr
Gate Voltage
90%
T = 125 C J
Gate Voltage T = 125 C J
td(off) tf
Drain Current
Drain Voltage
90% 5% 10 %
90% 10% 0
Drain Current
5%
Drain Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7125 Rev B
12-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

▲Up To Search▲

Price & Availability of APT12040JFLL

	To Download APT12040JFLL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .